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2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns

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Changzhou Trustec Company Limited
City:changzhou
Province/State:jiangsu
Country/Region:china
Contact Person:MsSelena Chai
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2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns

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Brand Name :trusTec
Model Number :BY299
Certification :ROHS
Place of Origin :China
MOQ :3K PCS
Price :Negotiable (EXW/FOB/CNF)
Payment Terms :T/T
Supply Ability :800KK PCS per month
Delivery Time :10 work days fresh products
Packaging Details :3K PCS per tape & box, 30K PCS per carton.
Material :Silicon
Trr :500ns
Package :DO-15
Max. reverse voltage :800V
Max. forward current :2A
Max. forward voltage :1.3V
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2A 500ns DO-15 Fast Recovery Rectifier Diode BY299 800V Reverse Voltage 1.3V Forward Voltage
BY296 THRU BY299
FAST RECOVERY RECTIFIERS
Reverse Voltage - 100 to 800 Volts Forward Current - 2.0 Ampere

Product Drawing

2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns

FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-15 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.014 ounce, 0.40 grams
MAXIMUM RATINGS
SYMBOLS
BY296
BY297
BY298
BY299
UNITS
Maximum repetitive peak reverse voltage
VRRM
100 200 400 800
VOLTS
Maximum RMS voltage
VRMS
70 140 280 560
VOLTS
Maximum DC blocking voltage
VDC
100 200 400 800
VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=75℃
I(AV)
2.0
Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
70.0
Amps
Maximum instantaneous forward voltage at 2.0A
VF
1.3
Volts
Maximum DC reverse current TA=25℃
at rated DC blocking voltage TA=100℃
IR

5.0

100.0

µA
Maximum reverse recovery time (NOTE 1)
trr
500 ns
Typical junction capacitance (NOTE 2)
CJ
40.0 pF
Typical thermal resistance (NOTE 3)
RθJA
40.0 ℃/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +150

Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Note:
1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
Characteristic Curves
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
2A Fast Recovery Diode BY299 800V Reverse Voltage 1.3V Forward Voltage 500ns
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