Changzhou Trustec Company Limited

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1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200

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Changzhou Trustec Company Limited
City:changzhou
Province/State:jiangsu
Country/Region:china
Contact Person:MsSelena Chai
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1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200

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Brand Name :trusTec
Model Number :SB120 THRU SB1200
Certification :ROHS
Place of Origin :China
MOQ :5K PCS
Price :Negotiable (EXW/FOB/CNF)
Payment Terms :T/T
Supply Ability :800KK PCS per month
Delivery Time :10 work days fresh products
Packaging Details :5K PCS per tape & box, 50K PCS per carton.
Max. reverse voltage :200V
Max. forward current :1A
Type :Schottky Diode
Max. forward voltage :0.95V
Ifsm :40A
Package :DO-41
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View Product Description
1A 20V to 200V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200 SKY Diode
SB120 THRU SB1200
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere

Product Dimension

1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200

ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS SB 120 SB 130 SB 140 SB 150 SB 160 SB 170 SB 180 SB 190 SB 1100 SB 1150 SB 1200 UNITS
Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 70 80 90 100 150 200 VOLTS
Maximum RMS voltage VRMS 14 21 28 35 42 49 56 63 70 105 140 VOLTS
Maximum DC blocking voltage VDC 20 30 40 50 60 70 80 90 100 150 200 VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length(see fig.1)
I(AV) 1.0 Amp
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)

IFSM

40.0

Amps

Maximum instantaneous forward voltage at 1.0A VF 0.55 0.70 0.85 0.95 Volts
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=100
IR 0.5 0.2 mA
10.0 5.0 2.0
Typical junction capacitance (NOTE 1) CJ 110 80 pF
Typical thermal resistance (NOTE 2) RqJA 50.0 ℃/W
Operating junction temperature range TJ, -65 to +125 -65 to +150
Storage temperature range TSTG -65 to +150

Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.012 ounce, 0.33 grams
Characteristic Curves
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
1A 20V 40v 60V 100V Schottky Barrier Rectifier Diode SB140 SB160 SB1100 SB1200
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