Changzhou Trustec Company Limited
TD DIODES YOUR TRUSTED BRAND AND YOUR RELIABLE SUPPLIER
Add to Cart
| TEST CONDITION | SYMBOLS | VALUE | UNITS | |||
| Min. | Typ. | Max. | ||||
| Breakover voltage | C=22nF | VBO | 28 | 32 | 36 | VOLTS |
| Breakover voltage symmetry | C=22nF | I+VBOI-I-VBOI | -3 | 3 | VOLTS | |
| Dynamic breakover voltage | (NOTE 1) | I D V ± I | 5 | VOLTS | ||
| Output voltage | DIAGRAM2 | VO | 5 | VOLTS | ||
| Breakover current | C=22nF | IBO | 100 | mA | ||
| Rise time | DIAGRAM3 | tr | 1.5 | mS | ||
| Leakage current | VR=0.5VBO | IB | 10 | mA | ||
| Power dissipation on printed circuit | TA=65 C | Pd | 150 | mW | ||
| Repetitive peak on-state current | tp=20ms f=100Hz | ITRM | 2 | A | ||
| Thermal Resistances from Junction to ambient | RQJA | 400 | ℃/W | |||
| Thermal Resistances from Junction to lead | RQJL | 150 | ℃/W | |||
| Operating junction and storage temperature range | TJ,TSTG | 125 | ℃ | |||