Changzhou Trustec Company Limited

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Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

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Changzhou Trustec Company Limited
City:changzhou
Province/State:jiangsu
Country/Region:china
Contact Person:MsSelena Chai
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Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

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Brand Name :trusTec
Model Number :DB3
Certification :ROHS
Place of Origin :China
MOQ :5K PCS
Price :Negotiable (EXW/FOB/CNF)
Payment Terms :T/T
Supply Ability :800KK PCS per month
Delivery Time :10 work days fresh products
Packaging Details :5K PCS per tape & box, 100K PCS per carton.
VBO :28-36V
VBO Typ :32V
Package :DO-35 glass
IBO :100μA
Type :DIAC
Package type :Through Hole
Material :Silicon
Power :150mW
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View Product Description
DO-35 Glass Package Silicon 150mW Signal Bi-directional Trigger Diode DIAC DB3
DB6
BIDIRECTIONAL TRIGGER DIODE
Breakover Voltage - 63 Volts Power- 150mW
Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal
Product Details
Small glass structure ensures high reliability
VBO:56-70V version
Low breakover current
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-35 glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:0.005 ounce, 0.14gram
MAXIMUM RATINGS AND CHARACTERISTICS
TEST CONDITION
SYMBOLS
VALUE
UNITS
Min. Typ. Max.
Breakover voltage
C=22nF
VBO
56 63 70
VOLTS
Breakover voltage symmetry
C=22nF
I+VBOI-I-VBOI
-3
3
VOLTS
Dynamic breakover voltage
(NOTE 1)
I D V ± I
5
VOLTS
Output voltage
DIAGRAM2
VO
5
VOLTS
Breakover current
C=22nF
IBO
100
mA
Rise time
DIAGRAM3
tr
1.5
mS
Leakage current
VR=0.5VBO
IB
10
mA
Power dissipation on printed circuit
TA=65 C
Pd
150
mW
Repetitive peak on-state current
tp=20ms
f=100Hz
ITRM
2 A
Thermal Resistances from Junction to ambient
RQJA
400
℃/W
Thermal Resistances from Junction to lead
RQJL
150 ℃/W
Operating junction and storage temperature range
TJ,TSTG
-40 125

Product Datasheet
Type Breakover Voltage Max. Breakover Voltage Symmetry Max. Peak Breakover Current Max. Dynamic Breakover Voltage Max. Peak On-state Current Package
V V μA V A
Min. Typ. Max.
DB3 28 32 36 3 100 5 2 DO-35
DB4 35 40 45 3 100 5 2 DO-35
DB6 56 63 70 3 100 5 2 DO-35
DB́8 72 80 88 3 100 5 2 DO-35

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

Db3 Diac Trigger Diode And Diac Db4 Db6 Db8 DO 35 150mW Signal

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